Inline Diffusion Furnace
BTU’s Meridian™ family of inline diffusion furnaces and dopant application systems provide the greatest flexibility and configurability resulting in a wide range of solutions which support current and future cell structures including: p-type traditional and PERC cells, n-type bi-facial and back contact cells.
Meridian furnaces provide unparalleled thermal uniformity (±2°C) ensuring repeatable lane-to-lane sheet resistance results and junction depth control. Sheet resistances over 150 ohms per square can be easily achieved with excellent junction uniformity. Meridian furnaces can also be used for processing p-type or n-type cells due to its maximum temperature capabilities up to 1000°C, enabling phosphorous, boron or co-diffused thermal profile requirements. Stacked Wafer Inline Furnace Technology (SWIFT) enables ultra-high throughout capabilities creating a uniquely scalable platform (up to 15,000 wafers per hour). Based on intellectual property from Fraunhofer ISE, BTU’s SWIFT wafer stacking approach allows simultaneous diffusion in Meridian inline furnaces.
BTU has also developed dopant formulations for a variety of dopant application methods including spray coating, screen printing and patterned doping methods. Dopant formulations are optimized per platform providing the an easy implementation path.
Contact BTU to learn more about our diffusion furnace solutions.